一种x波段低相位噪声AlGaN-GaN-HEMT MMIC推推振荡器

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062492

H. Zirath, Lai Szhau, D. Kuylenstierna, J. Felbinger, K. Andersson, N. Rorsman

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引用次数: 12

摘要

设计、制作了一种x波段低相位噪声AlGaN-GaN HEMT MMIC推推振荡器，并对其进行了表征。该振荡器基于两个共栅科尔皮茨振荡器。在100 kHz偏移时实现了-101 dBc的最小相位噪声。MMIC是捏造的

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An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator

An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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