亚阈值摆幅为100mv / 10年的分子薄膜晶体管

H. Klauk, M. Halik, U. Zschieschang, G. Schmid, C. Dehm, R. Brederlow, S. Briole
{"title":"亚阈值摆幅为100mv / 10年的分子薄膜晶体管","authors":"H. Klauk, M. Halik, U. Zschieschang, G. Schmid, C. Dehm, R. Brederlow, S. Briole","doi":"10.1109/IEDM.2003.1269240","DOIUrl":null,"url":null,"abstract":"We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Molecular thin film transistors with a subthreshold swing of 100 mV/decade\",\"authors\":\"H. Klauk, M. Halik, U. Zschieschang, G. Schmid, C. Dehm, R. Brederlow, S. Briole\",\"doi\":\"10.1109/IEDM.2003.1269240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

我们开发了一种基于高迁移率有机半导体(并五苯)和超薄分子自组装单层(SAM)栅极电介质的分子薄膜晶体管概念。这些晶体管工作电压在1到3v之间,亚阈值摆幅低至100 mV/ 10年。对于沟道长度为5 /spl mu/m的晶体管,我们测量了0.01 /spl mu/S//spl mu/m的跨导,据我们所知,这是有机半导体器件报道的最大跨导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Molecular thin film transistors with a subthreshold swing of 100 mV/decade
We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信