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引用次数: 0
摘要
为了克服铜互连的所有困难和复杂性,互连在集成电路领域发挥着最突出的作用,目前需要最大程度的关注。基于碳纳米材料的互连是研究人员提出的命题之一,而石墨烯纳米带(GNR)是其中最主要的伪造者。本文对gnr的表面阻抗响应进行了模拟、分析和比较。首先对铜、AsF5(钨)掺杂GNR和未掺杂GNR进行了高频下的趋肤深度响应和数据分析。之后,未掺杂和掺杂单层(单原子厚碳层,0。在高达500GHz的异常趋肤效应(ASE, p = 1 & 0)和正常趋肤效应(NSE)条件下检测了34nm) gnr。为了证明更好的响应,我们还研究了不同频率(100-300GHz)和不同层宽(20-60nm GNR板)下费米能级对阻抗的影响。
Surface Impedance Analysis of Graphene Nanoribbon for High Frequency Applications
Interconnect which plays the most prominent role in the IC sector needs the maximum attention nowadays to surmount all the difficulties and complications of Cu interconnect. Carbon Nanomaterial-based interconnects are one of the propositions of researchers and Graphene Nanoribbon (GNR) is the most leading pretender among all. In this research paper, the surface impedance response of GNRs has been simulated, analyzed and compared with respect to skin effect. First of all, skin depth response and data analysis of GNRs at high frequency has been covered for Copper, AsF5 (Tungsten) doped GNR and undoped GNR. Afterward, the surface impedance response of undoped and doped monolayer (one atomic thick carbon layer, 0. 34nm) GNRs have been examined under both anomalous skin effect (ASE, both p = 1 & 0) and normal skin effect (NSE) conditions up to 500GHz. To justify the better response, effects of Fermi energy level in different frequencies (100-300GHz) and layer width variation (20-60nm GNR slab) on impedance have also been investigated in both conditions.