一种确定单双栅无结晶体管耗尽宽度的方法

2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV) Pub Date : 2015-03-16 DOI:10.1109/EDCAV.2015.7060550

Kaushik Chandra Deva Sarma, Santanu Sharma

{"title":"一种确定单双栅无结晶体管耗尽宽度的方法","authors":"Kaushik Chandra Deva Sarma, Santanu Sharma","doi":"10.1109/EDCAV.2015.7060550","DOIUrl":null,"url":null,"abstract":"This paper presents a method for determining the depletion width of single and double gate Junction Less transistor. By solving 1D Poisson's equation the depletion width expression is obtained. The variation of depletion width for both n-channel and p-channel device with doping concentration, gate voltage, drain to source voltage and dielectric constant of gate dielectric are shown.","PeriodicalId":277103,"journal":{"name":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A method for determination of depletion width of single and double gate junction less transistor\",\"authors\":\"Kaushik Chandra Deva Sarma, Santanu Sharma\",\"doi\":\"10.1109/EDCAV.2015.7060550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a method for determining the depletion width of single and double gate Junction Less transistor. By solving 1D Poisson's equation the depletion width expression is obtained. The variation of depletion width for both n-channel and p-channel device with doping concentration, gate voltage, drain to source voltage and dielectric constant of gate dielectric are shown.\",\"PeriodicalId\":277103,\"journal\":{\"name\":\"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDCAV.2015.7060550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCAV.2015.7060550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文提出了一种确定单双栅无结晶体管耗尽宽度的方法。通过求解一维泊松方程，得到了耗竭宽度表达式。给出了n沟道和p沟道器件耗尽宽度随掺杂浓度、栅极电压、漏极源电压和栅极介电常数的变化规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A method for determination of depletion width of single and double gate junction less transistor

This paper presents a method for determining the depletion width of single and double gate Junction Less transistor. By solving 1D Poisson's equation the depletion width expression is obtained. The variation of depletion width for both n-channel and p-channel device with doping concentration, gate voltage, drain to source voltage and dielectric constant of gate dielectric are shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)

自引率

0.00%

发文量