脉冲激光沉积碳薄膜的椭偏研究

A. Dikovska, L. Tzonev, I. Avramova, P. Terziiska, I. Bineva, G. Avdeev, E. Valcheva, J. Mladenoff, O. Angelov, S. Kolev, T. Milenov
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引用次数: 1

摘要

采用脉冲激光沉积(PLD)技术制备了纳米晶碳薄膜。实验是在标准的轴上激光烧蚀(LA)配置下进行的。利用Nd:YAG激光的三次谐波对微晶石墨靶进行烧蚀。所有实验均在真空中进行,压力为1×10-3 Pa,沉积时间不同。(001)取向硅(Si)覆盖350或450 nm的二氧化硅(SiO2)层作为衬底。薄膜的厚度在4 ~ 40 nm之间,并通过x射线光电子能谱(XPS)、拉曼光谱(Raman)、原子力显微镜(AFM)和椭偏仪测量对其进行了表征。我们在厚度为1- 2nm的非晶碳膜上建立了纳米级石墨烯类薄膜的沉积。根据薄膜中sp3杂化碳的含量,测定了薄膜的禁隙(n和k),并确定了禁隙在0.01 eV ~ 1 eV之间的值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ellipsometric study of thin carbon films deposited by pulsed laser deposition
The fabrication of nano-crystalline carbon films was implemented by the application of pulsed laser deposition (PLD) technology. The experiments were performed in a standard on-axis laser ablation (LA) configuration. The third harmonic of a Nd:YAG laser was used for ablation of a microcrystalline graphite target. All experiments were performed in vacuum at a pressure of 1×10-3 Pa for different deposition times. (001) Oriented silicon (Si) covered by either 350 or 450 nm silica (SiO2) layer was used as a substrate. The films have a thickness between 4 and 40 nm and are characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, atomic force microscopy (AFM) and ellipsometry measurements. We established deposition of nano-sized graphene-like films on top of predominantly amorphous carbon films with a thickness of 1- 2 nm. The measured the (n and k) and determined the values for the forbidden gap of the films which are between 0.01 eV and about 1 eV with reference to the sp3 hybridized carbon content of the film.
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