A new cellular etching-simulator for InP and Si

. A simple etching simulator is presented that combines the advantages of geometrical and cellular models. The simulator is based on a cell representation of the crystal. The cells at the etching front are deterministically removed or remain in the crystal depending on the experimentally determined etching rates. We compare InP patterns etched in HBr and Si structures from the literature with simulated results. Although in the simulation only low indexed planes were taken into account higher index planes emerge at complex structures.