硅光电倍增管在大闪烁晶体上的有效定位

P. Menge, Kan Yang, Michael McLaughlin, B. Bacon
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引用次数: 5

摘要

硅光电倍增管(SiPMs)是光电倍增管(pmt)极具吸引力的替代品。然而,许多辐射探测器应用需要大量的单片闪烁体和相应的大量sipm。当使用多个sipm时,暗计数、噪声和成本随覆盖面积成比例地增加。当使用的sipm太少时,光收集的不均匀性会降低探测器的能量分辨率。在大型闪烁体上战略性地放置有限数量的sipm可以减少所需sipm的数量并降低成本-性能比。通过模拟和实验,找到了在大型NaI(Tl)晶体闪烁体上sipm的最佳定位的一般准则。例如,如果sipm放置在一个长方体表面的边缘和顶点附近,则实现足够能量分辨率所需的sipm数量只需要覆盖40%或更少的光输出面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient positioning of silicon photomultipliers on large scintillation crystals
Silicon photomultipliers (SiPMs) are attractive replacements for photomultiplier tubes (PMTs). However, many radiation detector applications require large volumes of monolithic scintillator and correspondingly large numbers of SiPMs. When multiples of SiPMs are used, the dark count noise and cost increase proportionally with the surface area covered. When too few SiPMs are used, non-uniformity of light collection degrades the energy resolution of the detector. Strategic placement of a limited number of SiPMs on a large scintillator can reduce the number of SiPMs necessary and decrease the cost-to-performance ratio. Simulations and experiments have been performed to find general guidelines regarding optimal positioning of SiPMs on large NaI(Tl) crystal scintillators. For example, if the SiPMs are placed near edges and vertices on one cuboid face, the number of SiPMs necessary to achieve adequate energy resolution need only cover 40% or less of the light output face.
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