基于超cmos二氧化钒器件的神经形态振荡神经网络仿真工具链

S. Carapezzi, Corentin Delacour, A. Todri-Sanial
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引用次数: 1

摘要

在这项工作中,我们使用计算机辅助设计(TCAD)软件演示了一个仿真工具链,以模拟基于Beyond CMOS二氧化钒(VO2)振荡器的神经模拟振荡神经网络(ONNs)。我们使用专用的TCAD方法来模拟VO2中的热致电阻开关。我们进行了TCAD和TCAD -SPICE混合模式仿真,模拟了ONN系统的所有关键元件:VO2器件,VO2振荡器和耦合VO2振荡器的动力学。这表明,TCAD多物理场模拟是探测VO2材料特性、器件几何形状和电路动力学之间相互作用的重要工具,同时为基于Beyond CMOS VO2振荡器的ONN技术的发展提供见解和指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation Toolchain for Neuromorphic Oscillatory Neural Networks Based on Beyond-CMOS Vanadium Dioxide Devices
In this work, we illustrate a simulation toolchain using technology computer-aided design (TCAD) software to simulate neuro-mimicking Oscillatory Neural Networks (ONNs) based on Beyond CMOS Vanadium Dioxide (VO2) oscillators. We use a dedicated TCAD approach to simulate thermal-induced resistive switching in VO2. We perform TCAD and TCAD -SPICE mixed-mode simulations to simulate all the key elements of the ONN system: VO2 device, VO2 oscillator and dynamics of coupled VO2 oscillators. This demonstrates that TCAD multi-physics simulations are an essential tool for probing the interplay between VO2 material properties, device geometry and circuit dynamics, while providing insights and guidelines for the development of ONN technology based on Beyond CMOS VO2 oscillators.
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