用于陡坡场效应晶体管的TiN衬里AgTe/TiO2阈值开关单片集成

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838478

Jeonghwan Song, Jaehyuk Park, Kibong Moon, J. Woo, Seokjae Lim, Jongmyung Yoo, Dongwook Lee, H. Hwang

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引用次数: 23

摘要

将AgTe/TiN/TiO2/TiN阈值开关(TS)器件与硅MOSFET单片集成，以展示陡峭亚阈值斜率场效应晶体管。顶部电极为AgTe的TS器件显示出高导通电流，因为Te允许从灯丝中提取Ag。在AgTe/TiO2界面上插入TiN衬垫，以防止线后端过程中Ag向TiO2层内扩散。最后，采用TS器件的晶体管即使经过400°C退火处理，也具有低于5 mv /dec的亚阈值斜率(SS)和>108的高开/关电流比(Ion/Ioff)和低漏极电压(0.5 V)。

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Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/Ioff) of >108 with a low drain voltage (0.5 V) even after the 400°C annealing process.

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2016 IEEE International Electron Devices Meeting (IEDM)

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