用[100]绝缘体上的硅制成的用于CD标准的电线宽测试结构的特性

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-02-29 DOI:10.1109/ICMTS.2000.844393

M. Cresswell, R. Allen, R. Ghoshtagore, N. Guillaume, P. Shea, S. C. Everist, L. W. Linholm

{"title":"用[100]绝缘体上的硅制成的用于CD标准的电线宽测试结构的特性","authors":"M. Cresswell, R. Allen, R. Ghoshtagore, N. Guillaume, P. Shea, S. C. Everist, L. W. Linholm","doi":"10.1109/ICMTS.2000.844393","DOIUrl":null,"url":null,"abstract":"This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in [100] Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards\",\"authors\":\"M. Cresswell, R. Allen, R. Ghoshtagore, N. Guillaume, P. Shea, S. C. Everist, L. W. Linholm\",\"doi\":\"10.1109/ICMTS.2000.844393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in [100] Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging.\",\"PeriodicalId\":447680,\"journal\":{\"name\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-02-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2000.844393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文描述了用[100]键合和蚀刻背绝缘体硅(BESOI)材料制作的跨桥电阻参考段线宽的制作和测量。通过电学和扫描电子显微镜(SEM)的截面成像测量了选定的电阻器测试结构的参考段的临界尺寸(CD)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards

This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in [100] Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging.

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ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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