射频mosfet小信号模型的解析参数提取

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635332

Y.S. Chi, J. Lu, S.Y. Zhang, Z. Wu, F. Huang

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引用次数: 5

摘要

提出了一种从s参数中直接提取MOSFET小信号模型参数(包括非准静态和衬底效应)的解析方法。该方法仅依赖于有源区测量的s参数，并通过0.13 μm CMOS工艺制作的射频MOSFET进行验证。仿真结果与实测数据吻合较好。

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An Analytical Parameter Extraction of the Small-Signal Model for RF MOSFETs

An analytical method to directly extract the MOSFET small-signal model parameters including non-quais-static and substrate effect from S-parameter is presented. This method only relies on S-parameter measured in active region and is verified by RF MOSFET fabricated in 0.13 μm CMOS technology. Good agreement is obtained between the simulated results and the measured data up to 30 GHz.

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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