一个精确和高效的MOS电路门电平延迟计算器

Foong-Charn Chang, Chin-Fu Chen, P. Subramaniam
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引用次数: 30

摘要

作者描述了一种精确、高效的门级延迟计算器,可以自动表征和计算MOS电路的门级延迟。高精度归功于一个复杂的延迟模型,其中包括波形的准确表示,延迟的一致和有意义的定义,考虑了门的输入和输出的波形斜率效应,以及处理传输门电路的创新方法。通过快速时序模拟技术、将二维延迟表简化为缩放的一维延迟表的定理以及增量表征过程,实现了高效的延迟表征。自1986年以来,延迟计算器已用于生产时序分析仪和生产多重延迟模拟器。多重延迟模拟器的执行速度比spice类电路模拟器快5000倍,而精度成本仅为15%。给出了门延迟模型、延迟特性和实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An accurate and efficient gate level delay calculator for MOS circuits
The authors describe an accurate and efficient gate-level delay calculator that automatically characterizes and computes the gate delays of MOS circuits. The high accuracy is attributed to a sophisticated delay model, which includes an accurate representation of the waveform, a consistent and meaningful definition of delay, a consideration of waveform slope effects at both the input and output of a gate, and an innovative approach for handling transmission gate circuits. The highly efficient delay characterization is accomplished through a fast timing simulation technique, a theorem that reduces a two-dimensional delay table into a scaled one-dimensional table, and an incremental characterization process. The delay calculator has been used in a production timing analyzer and a production multiple delay simulator since 1986. The multiple delay simulator performs 5000 times faster than a SPICE-like circuit simulator at only 15% cost of accuracy. Gate delay models, delay characterization, and practical examples are presented.<>
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