P.W. von Basse, D.G. Edwards, D. Essl, R. Hofmann, R. Losehand
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Realization of a 65K dynamic RAM device making exclusive use of VMOS transistors
A VMOS RAM, implemented without planar transistors requires only 6 mask steps instead of 7 and offers more options in process optimization, for example in the selection of the doping concentrations.
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