用于亚7nm节点的新型高灵敏度EUV光刻胶

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI:10.1117/12.2218936

Tomoki Nagai, H. Nakagawa, Takehiko Naruoka, S. Tagawa, A. Oshima, S. Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Y. Terashita, Y. Minekawa, E. Buitrago, Y. Ekinci, O. Yildirim, M. Meeuwissen, R. Hoefnagels, G. Rispens, C. Verspaget, R. Maas

{"title":"用于亚7nm节点的新型高灵敏度EUV光刻胶","authors":"Tomoki Nagai, H. Nakagawa, Takehiko Naruoka, S. Tagawa, A. Oshima, S. Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Y. Terashita, Y. Minekawa, E. Buitrago, Y. Ekinci, O. Yildirim, M. Meeuwissen, R. Hoefnagels, G. Rispens, C. Verspaget, R. Maas","doi":"10.1117/12.2218936","DOIUrl":null,"url":null,"abstract":"Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Novel high sensitivity EUV photoresist for sub-7nm node\",\"authors\":\"Tomoki Nagai, H. Nakagawa, Takehiko Naruoka, S. Tagawa, A. Oshima, S. Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Y. Terashita, Y. Minekawa, E. Buitrago, Y. Ekinci, O. Yildirim, M. Meeuwissen, R. Hoefnagels, G. Rispens, C. Verspaget, R. Maas\",\"doi\":\"10.1117/12.2218936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.\",\"PeriodicalId\":193904,\"journal\":{\"name\":\"SPIE Advanced Lithography\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2218936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2218936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 27

摘要

极紫外光刻技术(EUVL)已被认为是制造7纳米及以上节点半导体器件的最有前途的候选技术。将极紫外光刻技术成功引入大批量生产(HVM)的关键是在实现超高分辨率和低线边缘粗糙度(LER)的同时有效利用极紫外光剂量。在这里，我们展示了使用光敏化学放大抗蚀剂PSCARTM系统提高EUV抗蚀剂的灵敏度。本文描述了用EUV干涉光刻(EUV- il)对这种新型化学放大抗蚀剂(CAR)的评价，并讨论了其基本原理。

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Novel high sensitivity EUV photoresist for sub-7nm node

Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.

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SPIE Advanced Lithography

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