Optoelectronics for multi-terabit intelligent wavelength division multiplexing networks

This paper describes some of the opportunities for electronic enhancement of fiber optic systems, and presents some new results of device evaluations in this area. Recent standards efforts have turned their attention to data transmission rates of 10 gigabit/second and above for a single data link. This is being driven by a number of factors, including new industry standards efforts. Serial transceivers for 10 gigabit/second have been demonstrated, but present problems dealing with signal integrity between CMOS logic chips and the optical physical layer. One proposal is to integrate the 10 Gigabit serialize/deserialize function and data encode/decode function into the media access layer as a single CMOS ASIC, while an eye opener function and media dependent input/output interface would be implemented as a hybrid of SiGe and GaAs technologies. We have helped develop new SiGe manufacturing processes such as ultrahigh vacuum chemical vapor deposition which allow integration of SiGe with standard CMOS circuitry to form BiCMOS devices using sub-0.5 micron designs and standard 200 mm wafer substrates. SiGe cross point switches have been demonstrated with 17/spl times/17 channels capable of 3.2 gigabit/second data rates while requiring only 3.3 V and dissipating only 3.7 W of power. SiGe transimpedance amplifiers designed for 10 gigabit links have exhibited 3 GHz bandwidth with 280 nA room mean square noise, sensitivity down to 19 microamps, and power consumption as low as 470 mW.