Zakia Menssouri, Zineb Mrabet, L. Zenkouar, H. Qjidaa, K. Khadiri
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引用次数: 0
摘要
本文介绍了一种基于CMOS技术、频率为900Mhz的180nm电路的Vdd发生器的设计，该电路的输出电压约为1v，并且在无源UHF RFID标签中应用时必须保持恒定和稳定。这项工作的目的在于优化基于MOS电路的收获回收块，该电路通常功耗低，这对基于RFID的信息检索具有很大的兴趣，其中能量问题是至关重要的。该布局在CMOS 180nm中占据77 μ m x 89 μ m的小有源面积。
Design of VDD generator circuit for a passive UHF RFID tag in 180nm CMOS
This paper describes the design of a Vdd generator in CMOS technology 180nm circuit at 900Mhz frequency in order to have an output voltage of approximately 1 V, and which must be constant and stable for applications in passive UHF RFID Tag. The aim of this work resides in the optimization of the harvesting recuperation block based on the MOS circuit, which is generally of low consumption, which gives it great interest especially for RFID based information retrieval where the problem of energy is paramount. The layout occupies a small active area of 77µm x 89µm in CMOS 180nm.
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