基于平面交叉终端(IDT)结构的爆炸引信微等离子体生成改进设计

2017 11th International Conference on Intelligent Systems and Control (ISCO) Pub Date : 1900-01-01 DOI:10.1109/ISCO.2017.7856025

S. Dutta, R. K. Bhan, Udita Kapoor

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引用次数: 0

摘要

本文讨论了利用平面互指终端(IDT)结构产生微等离子体的改进设计。采用单掩膜工艺在石英晶片上电镀5µm的Au，制备了IDT结构。后续IDT手指之间的间隙保持在30µm。在大气条件下，IDT结构在570 ~ 580v偏置下产生微等离子体。

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Improved design for microplasma generation using planar interdigitated terminal (IDT) structure for explosive fuse applications

This paper discusses about improved design for microplasma generation using a planar interdigitated terminal (IDT) structure. The IDT structure is fabricated by Au electroplating (5 µm) using a single mask process on quartz wafer. The gap between the subsequent IDT fingers is kept at 30 µm. The IDT structure showed microplasma generation at 570–580 V bias in atmospheric condition.

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2017 11th International Conference on Intelligent Systems and Control (ISCO)

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