{"title":"一种采用0.13 um SiGe BiCMOS技术的g波段级联功率放大器","authors":"Xingcun Li, Wen-hua Chen, Zhenghe Feng","doi":"10.1109/UCMMT45316.2018.9015692","DOIUrl":null,"url":null,"abstract":"A G-band output stage power amplifier is designed in 0.13 um SiGe BiCMOS technology. Using a single-end cascode power amplifier topology with heterojunction bipolar transistors (HBTs), the single stage circuit achieves a saturated output power of 8.2 dBm, a peak small signal gain of 9 dB and a peak PAE of 3.7% operating at 185 GHz with 4 V supply. By selecting optimally sized HBTs in the each stage and optimizing the cascode layout structure to reduce parasitics, high output power and high gain are achieved. The final layout power amplifier achieved 1-dB saturated output power bandwidth from 171–196 GHz and 3-dB gain bandwidth from 174–194 GHz.","PeriodicalId":326539,"journal":{"name":"2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A G-band Cascode Power Amplifier in 0.13 um SiGe BiCMOS Technology\",\"authors\":\"Xingcun Li, Wen-hua Chen, Zhenghe Feng\",\"doi\":\"10.1109/UCMMT45316.2018.9015692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A G-band output stage power amplifier is designed in 0.13 um SiGe BiCMOS technology. Using a single-end cascode power amplifier topology with heterojunction bipolar transistors (HBTs), the single stage circuit achieves a saturated output power of 8.2 dBm, a peak small signal gain of 9 dB and a peak PAE of 3.7% operating at 185 GHz with 4 V supply. By selecting optimally sized HBTs in the each stage and optimizing the cascode layout structure to reduce parasitics, high output power and high gain are achieved. The final layout power amplifier achieved 1-dB saturated output power bandwidth from 171–196 GHz and 3-dB gain bandwidth from 174–194 GHz.\",\"PeriodicalId\":326539,\"journal\":{\"name\":\"2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UCMMT45316.2018.9015692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UCMMT45316.2018.9015692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A G-band Cascode Power Amplifier in 0.13 um SiGe BiCMOS Technology
A G-band output stage power amplifier is designed in 0.13 um SiGe BiCMOS technology. Using a single-end cascode power amplifier topology with heterojunction bipolar transistors (HBTs), the single stage circuit achieves a saturated output power of 8.2 dBm, a peak small signal gain of 9 dB and a peak PAE of 3.7% operating at 185 GHz with 4 V supply. By selecting optimally sized HBTs in the each stage and optimizing the cascode layout structure to reduce parasitics, high output power and high gain are achieved. The final layout power amplifier achieved 1-dB saturated output power bandwidth from 171–196 GHz and 3-dB gain bandwidth from 174–194 GHz.