随机模式的移相掩模超分辨率增强方法

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015452

A. Misaka, T. Matsuo, M. Sasago

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引用次数: 4

摘要

我们提出了两种新的移相掩模:中心线移相掩模(CL-PSM)和轮廓移相掩模(OL-PSM)。CL-PSM比交变移相掩模更能提高线模的自由度。与衰减相移掩模相比，OL-PSM大大提高了接触模式的分辨率。CL-PSM和OL-PSM都是强分辨率增强技术。此外，它们可以应用于随机逻辑模式，而无需多次暴露。它们将允许我们使用ArF光刻制作65纳米以下的节点逻辑lsi，并且也将用于VUV光刻。

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Super-resolution enhancement method with phase-shifting mask available for random patterns

We propose new two phase shifting masks: centerline phase-shifting mask (CL-PSM) and outline phase-shifting mask (OL-PSM). CL-PSM enhances the DOF of line patterns more than alternating phase-shifting masks. OL-PSM drastically improves the resolution of the contact pattern compared with attenuated phase-shifting masks. Both CL-PSM and OL-PSM are classified as strong resolution enhancement technologies. Furthermore, they can be applied to random logic patterns without multiple exposures. They will allow us to make sub-65-nm node logic LSIs with ArF lithography, and will also be useful for VUV lithography.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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