一种新的片上路径延迟测量体系结构

Xiaoxiao Wang, M. Tehranipoor, R. Datta
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引用次数: 34

摘要

随着技术规模扩展到45纳米及以下,使用模拟预测的路径延迟与制造芯片上的实际路径延迟之间的偏差会增加。因此,与使用昂贵的外部测试器相比,片上测量架构由于其更高的精度和更低的成本而被广泛使用。在本文中,我们提出了一种新的路径延迟测量架构,称为增强型基于路径的环形振荡器(path- ro),它考虑了变化。本文提出的增强型path - ro可以准确、快速地测量芯片上各种变化下的路径延迟,而几乎不影响功能数据路径。增强型路径ro完全适用于快速和准确的速度分组,以及通过瞄准芯片上的速度路径,即使在存在时钟偏差的情况下。通过插入ITC'99 b19电路的Enhanced Path-RO采集的各种变化下的仿真结果表明,该方法具有较高的精度和效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel architecture for on-chip path delay measurement
As technology scales to 45nm and below, the deviation between predicted path delay using simulation and actual path delay on a manufactured chip increases. Hence, on-chip measurement architectures are now widely used due to their higher accuracy and lower cost compared to using external expensive testers. In this paper, we propose a novel path delay measurement architecture called Enhanced path-based ring oscillator (Path-RO) that takes into account variations. The proposed Enhanced Path-RO can accurately and quickly measure path delay on-chip under variations with nearly no impact on functional data path. Enhanced Path-RO is perfectly suitable for fast and accurate speed binning as well by targeting speed paths on-chip even in presence of clock skew. Simulation results under variations collected by the Enhanced Path-RO inserted into ITC'99 b19 circuit demonstrate its high accuracy and efficiency.
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