在低成本晶体管中改进SOA

Samuel Leung, T. New
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引用次数: 0

摘要

综述了二次击穿的最新理论。提出了雪崩注入的一个简单概念。讨论了分布串联电阻的稳定因素分析条件。本文展示了一项巧妙的摩托罗拉专利,以低成本的精度实现了这一条件,并展示了Power Base(R)产品设计的结果。观察结果证实,在相同的发射器几何形状和芯片尺寸上使用上述设计特性,SOA得到了实质性的改进。常规热点未被注意到。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved SOA in low cost power transistor
Recent theories on second breakdown are reviewed. A simple concept on avalanche injection is proposed. The condition of distributed series resistance on stability factor analysis is discussed. An ingenious Motorola patent to realize this condition with low cost precision is illustrated and results on Power Base(R) product design shown. Observations confirm the substantial SOA improvement using above design features on the same emitter geometry and chip size. Conventional hot spot was not noted.
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