{"title":"一种SiGe差分有源滤波器，采用Sallen和Key单元","authors":"F. Temcamani, H. Diab, M. Regis, J. Gautier","doi":"10.1109/RFIC.2004.1320705","DOIUrl":null,"url":null,"abstract":"In this paper, a 1.3 GHz band pass filter, based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed, with input and output differential amplifiers optimized to have high performances in terms of CMMR, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurements. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. The measured even-mode rejection is close to 30 dB at the center frequency.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A SiGe differential active filter using a Sallen and Key cell\",\"authors\":\"F. Temcamani, H. Diab, M. Regis, J. Gautier\",\"doi\":\"10.1109/RFIC.2004.1320705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 1.3 GHz band pass filter, based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed, with input and output differential amplifiers optimized to have high performances in terms of CMMR, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurements. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. The measured even-mode rejection is close to 30 dB at the center frequency.\",\"PeriodicalId\":140604,\"journal\":{\"name\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2004.1320705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SiGe differential active filter using a Sallen and Key cell
In this paper, a 1.3 GHz band pass filter, based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed, with input and output differential amplifiers optimized to have high performances in terms of CMMR, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurements. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. The measured even-mode rejection is close to 30 dB at the center frequency.
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