{"title":"光波器件的最新发展综述","authors":"G. Olsen","doi":"10.1109/ELECTR.1991.718179","DOIUrl":null,"url":null,"abstract":"The structure and device properties of long wavelength lightwave devices - including, indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) - are described. Quantum efficiencies above 85% at 1.54 um, dark current densities near 1 uA/cm/sup 2/ (-5V, 300K) and 3 mm diameter shunt resistancies (10 mV, 300K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength In/sub x/Ga/sub 1-x/As (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm/sup 2/ at 1.8 um, 900 ohm -cm/sup 2/ at 2.1 um and 15 ohm -cm/sup 2/ at 2.6 um.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Review Of Recent Developments In Lightwave Devices\",\"authors\":\"G. Olsen\",\"doi\":\"10.1109/ELECTR.1991.718179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structure and device properties of long wavelength lightwave devices - including, indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) - are described. Quantum efficiencies above 85% at 1.54 um, dark current densities near 1 uA/cm/sup 2/ (-5V, 300K) and 3 mm diameter shunt resistancies (10 mV, 300K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength In/sub x/Ga/sub 1-x/As (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm/sup 2/ at 1.8 um, 900 ohm -cm/sup 2/ at 2.1 um and 15 ohm -cm/sup 2/ at 2.6 um.\",\"PeriodicalId\":339281,\"journal\":{\"name\":\"Electro International, 1991\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electro International, 1991\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTR.1991.718179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electro International, 1991","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTR.1991.718179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Review Of Recent Developments In Lightwave Devices
The structure and device properties of long wavelength lightwave devices - including, indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) - are described. Quantum efficiencies above 85% at 1.54 um, dark current densities near 1 uA/cm/sup 2/ (-5V, 300K) and 3 mm diameter shunt resistancies (10 mV, 300K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength In/sub x/Ga/sub 1-x/As (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm/sup 2/ at 1.8 um, 900 ohm -cm/sup 2/ at 2.1 um and 15 ohm -cm/sup 2/ at 2.6 um.
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