{"title":"空穴掺杂FeSb/ sub2 /的热电性能","authors":"A. Bentien, G. Madsen, S. Johnsen, B. Iversen","doi":"10.1109/ICT.2005.1519919","DOIUrl":null,"url":null,"abstract":"FeSb/sub 2/ is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb/sub 2-x/Sn/sub x/ samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"48 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermoelectric properties of hole doped FeSb/sub 2/\",\"authors\":\"A. Bentien, G. Madsen, S. Johnsen, B. Iversen\",\"doi\":\"10.1109/ICT.2005.1519919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FeSb/sub 2/ is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb/sub 2-x/Sn/sub x/ samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.\",\"PeriodicalId\":422400,\"journal\":{\"name\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"volume\":\"48 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2005.1519919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric properties of hole doped FeSb/sub 2/
FeSb/sub 2/ is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb/sub 2-x/Sn/sub x/ samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.
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