垂直自旋-轨道转矩MRAM单元的无场快速可靠确定性切换

A. Makarov, V. Sverdlov, S. Selberherr
{"title":"垂直自旋-轨道转矩MRAM单元的无场快速可靠确定性切换","authors":"A. Makarov, V. Sverdlov, S. Selberherr","doi":"10.1109/SISPAD.2018.8551716","DOIUrl":null,"url":null,"abstract":"We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells\",\"authors\":\"A. Makarov, V. Sverdlov, S. Selberherr\",\"doi\":\"10.1109/SISPAD.2018.8551716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们证明了由两个正交的连续电流脉冲产生的自旋轨道转矩可以在不施加外磁场的情况下可靠和确定地切换垂直磁化的自由磁层。通过允许第二脉冲通过的导线仅部分地与自由层重叠,可以减小开关电流。令人惊讶的是,部分重叠使切换更快,并且100%健壮。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells
We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.
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