{"title":"垂直自旋-轨道转矩MRAM单元的无场快速可靠确定性切换","authors":"A. Makarov, V. Sverdlov, S. Selberherr","doi":"10.1109/SISPAD.2018.8551716","DOIUrl":null,"url":null,"abstract":"We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells\",\"authors\":\"A. Makarov, V. Sverdlov, S. Selberherr\",\"doi\":\"10.1109/SISPAD.2018.8551716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells
We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.