Ching-Sung Lee, B. Chou, W. Hsu, S. Chu, D. Lin, C. Ho, Y. Lai, Shen-Han Yang, W. Chien
{"title":"透明掺铝氧化锌门控Al0.2Ga0.8As/In0.2Ga0.8As高电子迁移率晶体管的光学传感特性","authors":"Ching-Sung Lee, B. Chou, W. Hsu, S. Chu, D. Lin, C. Ho, Y. Lai, Shen-Han Yang, W. Chien","doi":"10.1109/SOPO.2010.5504370","DOIUrl":null,"url":null,"abstract":"A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.","PeriodicalId":155352,"journal":{"name":"2010 Symposium on Photonics and Optoelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical Sensing Characteristics in a Transparent Al-Doped Zinc Oxide-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistor\",\"authors\":\"Ching-Sung Lee, B. Chou, W. Hsu, S. Chu, D. Lin, C. Ho, Y. Lai, Shen-Han Yang, W. Chien\",\"doi\":\"10.1109/SOPO.2010.5504370\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.\",\"PeriodicalId\":155352,\"journal\":{\"name\":\"2010 Symposium on Photonics and Optoelectronics\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2010.5504370\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2010.5504370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical Sensing Characteristics in a Transparent Al-Doped Zinc Oxide-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistor
A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
