{"title":"Cu2 ZnSnS4(CZTS)太阳能电池的预测TCAD","authors":"Sundara Murthy Mopurisetty, M. Bajaj, S. Ganguly","doi":"10.1109/SISPAD.2018.8551619","DOIUrl":null,"url":null,"abstract":"We demonstrate the application of a calibrated simulation deck for Cu2ZnSnS4 (CZTS) solar cells developed by us for predictive device modeling. Specifically, we study the effect of nonidealities - series resistance (RS), carrier lifetime (τ), surface recombination velocity (SRV) - as well as that of novel transparent conductor materials.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Predictive TCAD of Cu2 ZnSnS4(CZTS) Solar Cells\",\"authors\":\"Sundara Murthy Mopurisetty, M. Bajaj, S. Ganguly\",\"doi\":\"10.1109/SISPAD.2018.8551619\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the application of a calibrated simulation deck for Cu2ZnSnS4 (CZTS) solar cells developed by us for predictive device modeling. Specifically, we study the effect of nonidealities - series resistance (RS), carrier lifetime (τ), surface recombination velocity (SRV) - as well as that of novel transparent conductor materials.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551619\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We demonstrate the application of a calibrated simulation deck for Cu2ZnSnS4 (CZTS) solar cells developed by us for predictive device modeling. Specifically, we study the effect of nonidealities - series resistance (RS), carrier lifetime (τ), surface recombination velocity (SRV) - as well as that of novel transparent conductor materials.