一维莫特-哈伯德绝缘体中的受激拉曼散射:一种新的太赫兹源

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441151

H. Ghosh, R. Chari

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引用次数: 0

摘要

一维莫特-哈伯德绝缘子在2波段扩展哈伯德模型中建模。对有限晶格模型进行了精确的数值求解。这些数值数据用于计算三次谐波产生、双光子吸收、电吸收以及受激拉曼散射等各种非线性磁化率。发现三维莫特-哈伯德绝缘体的受激拉曼散射磁化率比其他非线性光学磁化率大得多。本文首次对一维强相关系统的受激拉曼散射进行了研究。这导致这些化合物在太赫兹区产生强大的斯托克斯产生的潜力。

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Stimulated Raman scattering in one-dimensional Mott-Hubbard insulators: a novel THz source

One dimensional Mott-Hubbard insulators are modeled within 2-band extended Hubbard model. The model is solved exactly numerically for finite lattice. These numerical data are used to compute various nonlinear susceptibilities like third Harmonic generation, two photon absorption, electro absorption as well as the stimulated Raman scattering. The stimulated Raman scattering susceptibility for three one-dimensional Mott-Hubbard insulators is found to be very large even compared to other nonlinear optical susceptibilities. This is the first ever study on stimulated Raman scattering of one dimensional strongly correlated systems. This leads to a potential for strong Stokes generation in the THz regime from these compounds.

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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