An analytical approach for modelling of a top gated graphene based MOSFET

In the neoteric years, Graphene is one of the predominant resplendence in the horizon of fabrication technology owing to some of its tremendous electronic properties like zero band gap, high saturation velocity, higher electrical conductivity and so on. Graphene based devices are now being deliberated as one of possible options for post Si based electronics era. In this paper, we have analyzed the miscellaneous idiosyncratics of top gated graphene metal oxide semiconductor field effect transistor (MOSFET). Surface potential dependent quantum capacitance is obtained self-consistently along with linear and square root approximation. Gate voltage dependence of surface potential has been shown. Output characteristics, transfer characteristics of the proposed device model have been investigated. Considering all of the graphical illustrations, we strongly recommend Graphene to be a fellow replacement of silicon based devices in future MOSFET applications.