高压智能电源模块(HVIPM)研制

IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03. Pub Date : 2003-06-15 DOI:10.1109/PESC.2003.1218162

T. Tanaka, T. Mizoshiri, E. Suekawa, I. Umesaki, Y. Kawaguchi, J. Donlon

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引用次数: 6

摘要

采用优化的IGBT芯片、协调自由轮二极管、高质量的制造工艺和高性能栅极控制技术，开发了额定电压为600 A、6.5 kV的高压智能功率模块(HVIPM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of a high voltage intelligent power module (HVIPM)

A high voltage intelligent power module (HVIPM) rated at 600 A, 6.5 kV has been developed using an optimized punch through IGBT chip, coordinated free-wheel diode, high quality manufacturing processes, and high performance gate control technology.

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来源期刊

IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03.

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