集成和无监督机器学习在CMOS-MEMS后处理过程中氮化硅激光烧蚀质量研究中的应用

Chien-Chung Tsai, Chih-Chun Chan
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摘要

本文提出了一种基于CMOS-MEMS工艺中无监督机器学习(ML)的si3n4薄膜激光烧蚀研究的全新方法。研究表明,能量和间隔时间是532nm绿光激光烧蚀质量的主要因素。通过k-means算法,这个任务有四个合理的类。当间隔时间大于70 s时,平均激光烧蚀质量(reb)可达80%以上。间隔时间比50秒短,间隔时间小于74%。结果表明:能量0.318mJ,间隔时间84秒,脉冲射击5次,左垫位置与其他条件相比,最大reb为88.64%。最后,根据OLS回归的p值,能量与reb之间存在统计学上显著的关系。典型的集成学习器决策树和随机森林具有适当的分类能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ensemble and Unsupervised Machine Learning Applied on Laser Ablation Quality Study of Silicon Nitride during CMOS-MEMS Post Processing
This work proposes a brand-new approach for the laser ablation study of Si3 N4 film based upon unsupervised machine learning (ML) in the CMOS-MEMS process. The study demonstrates that energy and interval time dominate laser ablation quality for green light 532nm. There are four rational classes for this task by the k-means algorithm. While the interval time is longer than 70 s, the mean laser ablation quality (reb) is more than 80%. The interval time is shorter than the 50s which reb is less than 74%. The result shows energy 0.318mJ, interval time 84 seconds, pulse shots 5 times, and left pad position to have the maximum reb of 88.64% compared to other conditions. Finally, there is a statistically significant relationship between energy and reb based on the P-value of OLS regression. Typical ensemble learners Decision Tree and Random Forest have the appropriate classification ability.
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