Synthesis and characterization of few layers graphene films for potential applications in electronics

This work reports the synthesis and characterization of few layers graphene (FLG) film, which was grown by using a home-made APCVD set-up. The FLG films were grown on evaporated polycrystalline nickel films under a mixture of argon and methane with a relatively large-flow and for very short deposition times. The experimental parameters such as the argon/methane ratio and temperature were varied from 800 to 1000 °C, to obtain the optimal FLG deposition parameters. We were able to obtain relatively large area (1 × 1 inch) FLG films comprising 3-5 graphene sheets. Additionally, early attempts to make suitable graphene/SiO2/Si electronic devices are also reported.