偏颇校正多晶硅掺杂源技术横向扩散的测量

Proceedings of the 1991 International Conference on Microelectronic Test Structures Pub Date : 1990-03-18 DOI:10.1109/ICMTS.1990.161735

J. Anguita, C. Perello, M. Lozano, C. Cané, E. Lora-Tamayo

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引用次数: 1

摘要

提出了一种由变长耗尽型IGFET(绝缘栅场效应晶体管)和短多晶硅栅源结组成的新型测试结构。这种结构使得从电测量中提取有效的通道长度成为可能，因此，提取了其源结上的横向扩散量。选择一种特殊的栅极和源短路排列来消除不对准误差。

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Measurement of lateral diffusion on technologies with polysilicon doping source with misalignment correction

A novel test structure consisting of a varying length depletion IGFET (insulated-gate field effect transistor) with a shorted polysilicon gate-source junction is presented. This structure makes it possible to extract an effective channel length from an electrical measurement and, as a result, the amount of lateral diffusion on its source junction is extracted. A particular arrangement of the gate and source shorts is selected to eliminate misalignment errors.<>

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Proceedings of the 1991 International Conference on Microelectronic Test Structures

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