Kasper L. J⊘rgensen, Maria C. Mira, Zhe Zhang, M. Andersen
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Loss analysis of GaN based partial parallel isolated bidirectional full bridge boost converter
A theoretical loss analysis is presented for GaN switches, for which conduction and switching losses are considered, and for planar transformers, where winding and core losses are considered. The analysis is then used to make a comparison of the losses in the partial parallel isolated full bridge boost converter and the isolated full bridge boost converter.