衬底对fecb - sio2薄膜结构和静电电磁性能的影响

2009 International Conference on Applied Superconductivity and Electromagnetic Devices Pub Date : 2009-10-30 DOI:10.1109/ASEMD.2009.5306621

L. Zhang, Z. W. Zhu, L. Deng

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引用次数: 2

摘要

研究了磁控溅射在不同衬底(硅、玻璃和聚酯薄膜)上沉积的fecb - sio2薄膜的微观结构和电磁性能。x射线衍射结果表明，FeCo纳米晶仅在硅和玻璃衬底上的fecb - sio2薄膜中析出，而在Mylar衬底上的fecb - sio2薄膜呈非晶态。原子显微镜(AFM)的表面图像表明，在Mylar衬底上发现了最大粒径(约120 ~ 150 nm)的薄膜和团聚颗粒。研究了薄膜在不同衬底上的静态电磁特性，包括电阻率和饱和磁化率。溅射膜的电阻率最高(2140 μΩcm)，饱和磁化强度最高(4πMs = 13 kG)。

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Substrates influence on the structure and static electromagnetic properties of FeCoB-SiO2 thin films

The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained by atomic microscopy (AFM) indicated that films on Mylar substrate with biggest particle size (about 120–150 nm), and agglomerated particle was discovered. The static electromagnetic properties, including resistivity and saturation magnetization for the films on different substrates, had also been investigated. The films sputtered on glass showed highest resistivity (2140 μΩcm) and a biggest saturation magnetization (4πMs = 13 kG).

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2009 International Conference on Applied Superconductivity and Electromagnetic Devices

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