T. Lee, S. Choi, S. Seo, S. Lee, S.I. Jung, C.J. Lee
{"title":"催化气相沉积法制备双壁碳纳米管的场发射特性","authors":"T. Lee, S. Choi, S. Seo, S. Lee, S.I. Jung, C.J. Lee","doi":"10.1109/IVNC.2004.1354898","DOIUrl":null,"url":null,"abstract":"High quality DWNTs (double-walled carbon nanotubes) was produced by a catalytic CVD. The field emission was measured using parallel-plate geometry with a gap distance of 270 /spl sim/ 370 /spl mu/m under a 2 /spl times/ 10/sup -7 /Torr. The turn-on electric field of DWNTs was about 1.7 /spl sim/ 3.5 V//spl mu/m at /spl sim/ 1.0 /spl times/ 10/sup -7/ mA/cm/sup 2/ and the current density of DWNTs was about /spl sim/ 20mA/cm/sup 2/ at the applied electric field of /spl sim/ 8V//spl mu/m. The lifetime indicated good stability for 20 hours when constant DC voltage applied at high current density of /spl sim/ 1.0 /spl times/ 10/sup -3/ A/cm/sup 2/.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Field emission properties from double walled carbon nanotubes produced by a catalytic CVD\",\"authors\":\"T. Lee, S. Choi, S. Seo, S. Lee, S.I. Jung, C.J. Lee\",\"doi\":\"10.1109/IVNC.2004.1354898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quality DWNTs (double-walled carbon nanotubes) was produced by a catalytic CVD. The field emission was measured using parallel-plate geometry with a gap distance of 270 /spl sim/ 370 /spl mu/m under a 2 /spl times/ 10/sup -7 /Torr. The turn-on electric field of DWNTs was about 1.7 /spl sim/ 3.5 V//spl mu/m at /spl sim/ 1.0 /spl times/ 10/sup -7/ mA/cm/sup 2/ and the current density of DWNTs was about /spl sim/ 20mA/cm/sup 2/ at the applied electric field of /spl sim/ 8V//spl mu/m. The lifetime indicated good stability for 20 hours when constant DC voltage applied at high current density of /spl sim/ 1.0 /spl times/ 10/sup -3/ A/cm/sup 2/.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field emission properties from double walled carbon nanotubes produced by a catalytic CVD
High quality DWNTs (double-walled carbon nanotubes) was produced by a catalytic CVD. The field emission was measured using parallel-plate geometry with a gap distance of 270 /spl sim/ 370 /spl mu/m under a 2 /spl times/ 10/sup -7 /Torr. The turn-on electric field of DWNTs was about 1.7 /spl sim/ 3.5 V//spl mu/m at /spl sim/ 1.0 /spl times/ 10/sup -7/ mA/cm/sup 2/ and the current density of DWNTs was about /spl sim/ 20mA/cm/sup 2/ at the applied electric field of /spl sim/ 8V//spl mu/m. The lifetime indicated good stability for 20 hours when constant DC voltage applied at high current density of /spl sim/ 1.0 /spl times/ 10/sup -3/ A/cm/sup 2/.