5G毫米波通信系统的极低相位噪声压控振荡器

2020 1st International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET) Pub Date : 2020-04-01 DOI:10.1109/IRASET48871.2020.9092005

A. Es-saqy, Maryam Abata, S. Mazer, M. Fattah, M. Mehdi, M. Bekkali, C. Algani

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引用次数: 8

摘要

本文提出了一种用于5G毫米频段的Colpitts VCO定制结构，与文献中发表的其他结构相比，该结构具有非常低的相位噪声水平。仿真结果表明，该VCO在28ghz左右的调谐范围为1.69 GHz，输出功率为3.3 dBm，与载波偏移频率为1mhz时相位噪声约为-123.2dBc/Hz。该压控振荡器采用MMIC技术设计，采用UMS代工厂PH15工艺的pHEMT晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Very Low Phase Noise Voltage Controlled Oscillator for 5G mm-wave Communication Systems

A customized structure of the Colpitts VCO for the 5G millimeter band is presented in this paper, this structure has a very low phase noise level compared to other structures published in the literature. Simulation results show that our VCO has a tuning range of 1.69 GHz around 28 GHz, an output power of 3.3 dBm and a phase noise around -123.2dBc/Hz at 1 MHz offset frequency from carrier. The VCO is designed in MMIC technology using the pHEMT transistor of PH15 process from UMS foundry.

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2020 1st International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET)

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