偏置磁场和退火对Terfenol-D薄膜磁化性能的影响

Keli Zhao, Yuhui Zhang, Guangyao Pei, Jian Luo, B. Ma
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引用次数: 0

摘要

无定形Terfenol-D $(\text{Tb}_{0.3} \text{Dy}_{0.7} \text{Fe}_{2})$薄膜在弱磁场中具有高磁化强度,是弱磁传感器必不可少的材料。研究了平行于薄膜平面的恒定100 Oe磁场对沉积过程的影响。然后在不同温度下对薄膜进行退火,讨论退火对Terfenol-D薄膜磁化性能的影响。增加饱和磁化强度和减小有效各向异性常数可以增强Terfenol-D薄膜的磁化强度。在600℃下退火10 min,获得了100 Oe 0.47 emu/g的磁化强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of the Bias Magnetic Field and Annealing on the Magnetization of Terfenol-D Films
Amorphous Terfenol-D $(\text{Tb}_{0.3} \text{Dy}_{0.7} \text{Fe}_{2})$ film with high magnetization in weak fields is essential to weak magnetic sensors. The influences of a constant 100 Oe magnetic field parallel to the film plane during the deposition are studied. Then the film was annealed at different temperatures to discuss the effects of annealing on the magnetization of Terfenol-D film. The magnetization of Terfenol-D film could be enhanced by incremental saturation magnetization and decreased effective anisotropy constant. The magnetization at 100 Oe of 0.47 emu/g was obtained with the annealing at 600°C for 10 minutes.
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