光敏器件用半导体结构的热阻

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088482

J. Darmo, F. Schafer, A. Forster, P. Kordos, R. Gusten

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引用次数: 0

摘要

研究了用于gaas基光电混合器件的层状半导体系统的热阻。在衬底上使用非化学计量GaAs的层状体系的热阻增加了约33%，而使用薄的AlAs/GaAs多层结构的热阻仅比GaAs衬底的热阻大10%。讨论了研究结果的散热和对光电合成器件的影响。

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Thermal resistance of the semiconductor structures for a photomixing device

The thermal resistance of layered semiconductor systems intended to be used for GaAs-based photomixing devices is studied. Layered systems with nonstoichiometric GaAs on the substrate exhibit an increase of thermal resistance of about 33%, while using a thin AlAs/GaAs multilayer structure leads to a thermal resistance only 10% larger than the thermal resistance of the GaAs substrate. The results are discussed with respect to the heat dissipation and implications for the photomixer device.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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