高选择性蚀刻制备硅原生氧化膜及其在硅基上纳米管阵列和微膜片的应用

R. Sugino, T. Ito
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引用次数: 0

摘要

提出了一种利用硅原生氧化物膜制造空腔的新技术。采用高选择性Cl2刻蚀法对硅进行表面湿化处理,形成了硅原生氧化物膜。在由SiO2掩膜支撑的薄膜上沉积薄膜后,可在衬底上形成空腔。该技术的优点是即使在膜沉积后仍能保持腔体的CD以密封通孔
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate
A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening
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