基于0.18μm HV RF CMOS技术的集成zigbee发射器和DC-DC转换器

Chaojiang Li, Dawn Wang, Myra Boenke, T. Letavic, J. Cohn
{"title":"基于0.18μm HV RF CMOS技术的集成zigbee发射器和DC-DC转换器","authors":"Chaojiang Li, Dawn Wang, Myra Boenke, T. Letavic, J. Cohn","doi":"10.1109/ASICON.2013.6811896","DOIUrl":null,"url":null,"abstract":"A System-On-Chip (SOC) demonstrator integrating a low-noise IEEE 802.15.4 Transmitter and a DC-DC converter on a 0.18um High Voltage (HV) and RF CMOS process is presented in this paper. Noise isolation performance is critical to success of this type of SOC. A complete direct conversion transmitter was designed and various Quadrature VCO topologies were analyzed and compared based on the phase noise performance, device reliability, design robustness and image rejection. The final QVCO used in the transmitter has a FOM of 187dB, leading to an overall phase noise of -123dBc/Hz at 1MHz offset. The deep Nwell from HVCMOS process can be effectively used to provide isolation between the circuit blocks with measured results showing a sufficient noise isolation between the sensitive RF circuit and the switching 10MHz DC-DC converter.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An integrated zigbee transmitter and DC-DC converter on 0.18μm HV RF CMOS technology\",\"authors\":\"Chaojiang Li, Dawn Wang, Myra Boenke, T. Letavic, J. Cohn\",\"doi\":\"10.1109/ASICON.2013.6811896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A System-On-Chip (SOC) demonstrator integrating a low-noise IEEE 802.15.4 Transmitter and a DC-DC converter on a 0.18um High Voltage (HV) and RF CMOS process is presented in this paper. Noise isolation performance is critical to success of this type of SOC. A complete direct conversion transmitter was designed and various Quadrature VCO topologies were analyzed and compared based on the phase noise performance, device reliability, design robustness and image rejection. The final QVCO used in the transmitter has a FOM of 187dB, leading to an overall phase noise of -123dBc/Hz at 1MHz offset. The deep Nwell from HVCMOS process can be effectively used to provide isolation between the circuit blocks with measured results showing a sufficient noise isolation between the sensitive RF circuit and the switching 10MHz DC-DC converter.\",\"PeriodicalId\":150654,\"journal\":{\"name\":\"2013 IEEE 10th International Conference on ASIC\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 10th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2013.6811896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6811896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

介绍了一种集成低噪声IEEE 802.15.4发送器和DC-DC转换器的片上系统(SOC)演示器,该系统采用0.18um高电压和射频CMOS工艺。噪声隔离性能对这种类型SOC的成功至关重要。设计了一个完整的直接转换发射机,并基于相位噪声性能、器件可靠性、设计鲁棒性和图像抑制性对各种正交VCO拓扑进行了分析和比较。发射机中使用的最终QVCO具有187dB的FOM,导致在1MHz偏移时的总相位噪声为-123dBc/Hz。来自HVCMOS工艺的深Nwell可以有效地用于在电路块之间提供隔离,测量结果显示敏感RF电路和开关10MHz DC-DC转换器之间具有足够的噪声隔离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An integrated zigbee transmitter and DC-DC converter on 0.18μm HV RF CMOS technology
A System-On-Chip (SOC) demonstrator integrating a low-noise IEEE 802.15.4 Transmitter and a DC-DC converter on a 0.18um High Voltage (HV) and RF CMOS process is presented in this paper. Noise isolation performance is critical to success of this type of SOC. A complete direct conversion transmitter was designed and various Quadrature VCO topologies were analyzed and compared based on the phase noise performance, device reliability, design robustness and image rejection. The final QVCO used in the transmitter has a FOM of 187dB, leading to an overall phase noise of -123dBc/Hz at 1MHz offset. The deep Nwell from HVCMOS process can be effectively used to provide isolation between the circuit blocks with measured results showing a sufficient noise isolation between the sensitive RF circuit and the switching 10MHz DC-DC converter.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信