{"title":"用于提高InGaAs/InP单光子探测器雪崩概率的图案锌扩散结构","authors":"J. Cheng, Y. Lo","doi":"10.1109/PHO.2011.6110572","DOIUrl":null,"url":null,"abstract":"Optimal fabrication of the p-i-n junction in a high performance InGaAs/InP single photon avalanche photodiode is challenging. We present a novel design with patterned Zn-diffusion to greatly improve the detection efficiency and reduce dark count.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Patterned zinc-diffused structures for improved avalanche probabilities in InGaAs/InP single photon detectors\",\"authors\":\"J. Cheng, Y. Lo\",\"doi\":\"10.1109/PHO.2011.6110572\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optimal fabrication of the p-i-n junction in a high performance InGaAs/InP single photon avalanche photodiode is challenging. We present a novel design with patterned Zn-diffusion to greatly improve the detection efficiency and reduce dark count.\",\"PeriodicalId\":173679,\"journal\":{\"name\":\"IEEE Photonic Society 24th Annual Meeting\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonic Society 24th Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHO.2011.6110572\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Patterned zinc-diffused structures for improved avalanche probabilities in InGaAs/InP single photon detectors
Optimal fabrication of the p-i-n junction in a high performance InGaAs/InP single photon avalanche photodiode is challenging. We present a novel design with patterned Zn-diffusion to greatly improve the detection efficiency and reduce dark count.
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