Hao-Tien Cheng, Cheng-Han Wu, W. Fu, Hsiao-Lun Wang, M. Feng, C. Wu
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Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K
Efficient and reliable interconnect could be achieved with cryogenic VCSELs. In this work, our home-made 850 nm VCSEL is characterized from 298 K to 223 K. At 223 K, our device exhibits an output power of 6 mW, and achieves a record -3dB bandwidth of 40.1 GHz. The higher laser output power and extended bandwidth of the VCSEL attributes to the reduced junction temperature of 62°C at 223 K.
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