电迁移，熔断器和热机械性能的焊料碰撞与铜柱倒装芯片组件

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI:10.1109/ESIME.2011.5765847

B. Vandevelde, R. Labie, V. Cherman, T. Webers, C. Winters, E. Beyne, F. Dosseul

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引用次数: 2

摘要

研究了两种不同的倒装芯片碰撞结构的热力学、电迁移和熔合行为。标准SAC (SnAgCu)焊料凸点与芯片侧Ni/Au涂层的铜柱凸点进行了比较，并焊接了一层薄薄的SnAg合金。对于测试结构，倒装芯片组件集成在BGA封装中。有限元模型被用来支持实验工作和解释一些结论。

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Electromigration, fuse and thermo-mechanical performance of solder bump versus Cu pillar flip chip assemblies

Two different flip chip bump configurations have been investigated in terms of their thermo-mechanical, electromigration and fusing behaviour. Standard SAC (SnAgCu) solder bumps with a Ni/Au finish on the chip side are compared with Cu pillar bumps soldered with a thin layer of SnAg alloy. For the test structure, the flip chip assembly is integrated in a BGA package. Finite Element Modelling is used to support the experimental work and explain some of the conclusions.

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来源期刊

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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