56gb /s Si/GeSi光调制器

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2018-07-29 DOI:10.1364/CLEOPR.2018.TH3C.2

L. Mastronardi, M. Banakar, A. Khokhar, N. Hattasan, T. Rutirawut, T. D. Bucio, K. Grabska, C. Littlejohns, Alexandre Bazin, G. Mashanovich, F. Gardes

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引用次数: 0

摘要

本文介绍了在800 nm SOI平台上开发的EAM调制器的实验测量结果，该调制器工作在1566 nm，动态ER为5.2 dB, 56 Gb/s, EO带宽为56 GHz，功耗为44 fJ/bit。

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56 Gb/s Si/GeSi Optical Modulator

We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.

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来源期刊

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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