基于热载流子评价的DRAM感测放大器不平衡辨识

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers Pub Date : 1991-05-22 DOI:10.1109/VTSA.1991.246704

S. Aur, C. Duvvury, H. McAdams, C. Perrin

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引用次数: 0

摘要

本文研究了DRAM感测放大器固有不平衡的原因。刷新时间测量是用来评估这种不平衡之前和之后的热载流子应力。利用电路热电子效应模拟器，比较了应力对感应振幅的影响。分析表明，锁存晶体管阈值电压的变化，而不是布局电容的差异，是造成原有不平衡的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Identification of DRAM sense amplifier imbalance using hot carrier evaluation

The authors present a study of the causes of inherent imbalance in a DRAM sense amplifier. Refresh time measurements are used to assess this imbalance before and after hot carrier stress. The stress effect on the sense amplitude is compared to simulations using a circuit hot electron effect simulator. This analysis shows that the latch transistor threshold voltage variation, rather than layout capacitance difference, is the cause for the original imbalance.<>

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1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers

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