DARPA的太赫兹电子项目:晶体管、tmic和放大器

John D. Albrecht, M. Rosker, H. Bruce Wallace, Tsu-Hsi Chang
{"title":"DARPA的太赫兹电子项目:晶体管、tmic和放大器","authors":"John D. Albrecht, M. Rosker, H. Bruce Wallace, Tsu-Hsi Chang","doi":"10.1109/MWSYM.2010.5517258","DOIUrl":null,"url":null,"abstract":"Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world's fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"THz electronics projects at DARPA: Transistors, TMICs, and amplifiers\",\"authors\":\"John D. Albrecht, M. Rosker, H. Bruce Wallace, Tsu-Hsi Chang\",\"doi\":\"10.1109/MWSYM.2010.5517258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world's fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.\",\"PeriodicalId\":341557,\"journal\":{\"name\":\"2010 IEEE MTT-S International Microwave Symposium\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2010.5517258\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5517258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 47

摘要

革命性太赫兹发射机和接收机的演示是DARPA一系列项目的持续重点。通过太赫兹电子学和相关项目的赞助,正在建立一个技术基础,以有效地产生、检测、处理和辐射亚毫米波频率,以利用这一几乎无法进入的频率域,用于成像、雷达、光谱学和通信应用。晶体管、集成技术、功率放大及其精密计量是积极研究的关键要素。太赫兹InP晶体管已经实现,使世界上最快的0.48太赫兹单片集成电路成为可能。采用微机械真空电子器件的紧凑太赫兹高功率放大器将使辐射源达到1.03太赫兹,瞬时带宽为15 GHz。最终,低损耗互连和集成技术将使tmic与hpa耦合,以实现太赫兹相干外差收发器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
THz electronics projects at DARPA: Transistors, TMICs, and amplifiers
Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world's fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.
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