基于二维水动力模型的场极板AlGaN/GaN hemt研究

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282657

B. Benbakhti, M. Rousseau, J. De Jaeger

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引用次数: 6

摘要

场极板AlGaN/GaN HEMT(高电子迁移率晶体管)结构在提高微波功率性能方面非常有前景。该器件允许提高击穿电压，但场极板(FP)电极涉及寄生电容的增加，从而导致电流增益转换频率的下降。因此，必须根据工作频率找到一个折衷方案。本文建立了一个二维流体力学理论模型，研究了FP对装置性能的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance

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2006 European Microwave Integrated Circuits Conference

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