90nm SiGe BiCMOS技术，适用于毫米波和高性能模拟应用

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI:10.1109/BCTM.2014.6981293

J. Pekarik, J. Adkisson, P. Gray, Q. Liu, R. Camillo-Castillo, M. Khater, V. Jain, B. Zetterlund, A. DiVergilio, X. Tian, A. Vallett, J. Ellis-Monaghan, B. J. Gross, P. Cheng, V. Kaushal, Z. He, J. Lukaitis, K. Newton, M. Kerbaugh, N. Cahoon, L. Vera, Y. Zhao, J. Long, A. Valdes-Garcia, S. Reynolds, W. Lee, B. Sadhu, D. Harame

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引用次数: 79

摘要

我们介绍了首个90nm SiGe BiCMOS技术的电气特性，该技术是为IBM大批量200mm生产线生产而开发的。该技术具有300 GHz fT和360 GHz fMAX高性能SiGe hbt, 135 GHz fT和2.5V BVCEO中击穿SiGe hbt, 90nm低功率RF CMOS以及全套无源器件。设计套件支持定制和模拟设计，数字功能库有助于逻辑和内存设计。该技术支持毫米波和高性能射频/模拟应用。

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A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

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来源期刊

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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