{"title":"利用图像化生长的量子阱激光器","authors":"E. Kapon, C. Yun, J. Harbison, R. Bhat, D. Hwang","doi":"10.1109/LEOS.1988.689753","DOIUrl":null,"url":null,"abstract":"E. Kapon, C.P Yun, J.P. Harbison, R. Bhat and D.M. Hwang, Bell Communications Research, RedBank, NJ. We describe novel quantum well laser structures that rely on the characteristics of the growth of quantum well heterostructures on nonplanar substrates. Such lasers, grown by molecular beam epitaxy, exhibit very low threshold currents, as low as 1.8mA. Lasers grown by organometallicchemical vapordeposit ion have q uan t u m-w i re-I i ke active reg ions.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum Well Lasers Using Patterned Growth\",\"authors\":\"E. Kapon, C. Yun, J. Harbison, R. Bhat, D. Hwang\",\"doi\":\"10.1109/LEOS.1988.689753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"E. Kapon, C.P Yun, J.P. Harbison, R. Bhat and D.M. Hwang, Bell Communications Research, RedBank, NJ. We describe novel quantum well laser structures that rely on the characteristics of the growth of quantum well heterostructures on nonplanar substrates. Such lasers, grown by molecular beam epitaxy, exhibit very low threshold currents, as low as 1.8mA. Lasers grown by organometallicchemical vapordeposit ion have q uan t u m-w i re-I i ke active reg ions.\",\"PeriodicalId\":428080,\"journal\":{\"name\":\"Conference Proceedings LEOS Lasers and Electro-Optics Society\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1988.689753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1988.689753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
E. Kapon, c.p. Yun, J.P. Harbison, R. Bhat和D.M. Hwang，贝尔通信研究，RedBank, NJ。我们描述了依赖于量子阱异质结构在非平面基底上生长的特性的新型量子阱激光结构。这种由分子束外延生长的激光器具有非常低的阈值电流，低至1.8mA。由有机金属化学气相沉积离子生长的激光器在其活跃区域已经达到了100 m-w。
E. Kapon, C.P Yun, J.P. Harbison, R. Bhat and D.M. Hwang, Bell Communications Research, RedBank, NJ. We describe novel quantum well laser structures that rely on the characteristics of the growth of quantum well heterostructures on nonplanar substrates. Such lasers, grown by molecular beam epitaxy, exhibit very low threshold currents, as low as 1.8mA. Lasers grown by organometallicchemical vapordeposit ion have q uan t u m-w i re-I i ke active reg ions.
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